? semiconductor components industries, llc, 2014 june, 2014 ? rev. 0 1 publication order number: NVJD5121N/d NVJD5121N power mosfet 60 v, 300 ma, dual n?channel with esd protection, sc?88 features ? low r ds(on) ? low gate threshold ? low input capacitance ? esd protected gate ? nvjd prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? this is a pb?free device applications ? low side load switch ? dc?dc converters (buck and boost circuits) maximum ratings (t j = 25 c unless otherwise stated) parameter symbol value unit drain?to?source v oltage v dss 60 v gate?to?source v oltage v gs 20 v continuous drain current (note 1) stead y state t a = 25 c i d 300 ma t a = 85 c 233 t 5 s t a = 25 c 310 t a = 85 c 240 power dissipation (note 1) steady state t a = 25 c p d 300 mw t 5 s 319 pulsed drain current t p = 10 s i dm 1200 ma operating junction and storage temperature t j , t stg ?55 to 175 c source current (body diode) i s 250 ma lead temperature for soldering purposes (1/8? from case for 10 s) t l 260 c gate?source esd rating (hbm) esd hbm 2000 v gate?source esd rating (mm) esd mm 200 v thermal resistance ratings parameter symbol value unit junction?to?ambient ? stea dy state r ja 500 c/w junction?to?ambient ? t 5 s r ja 470 stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. surface mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [2 oz] including traces). top view http://onsemi.com sc?88 (sot?363) d 1 g 2 s 2 s 1 g 1 6 5 4 1 2 3 v (br)dss r ds(on) max i d max 60 v 1.6 @ 10 v 2.5 @ 4.5 v 300 ma d 2 device package shipping ? ordering information NVJD5121Nt1g sc?88 (pb?free) 3000 / tape & ree l ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. http://onsemi.com marking diagram & pin assignment vtf m 1 6 1 vtf = device code m = date code = pb?free package d1 g2 s2 s1 g1 d2 (note: microdot may be in either location) sc?88/sot?363 case 419b style 26
NVJD5121N http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise stated) parameter symbol test condition min typ max unit off characteristics drain?to?source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 60 v drain?to?source breakdown voltage temperature coefficient v (br)dss /t j i d = 250 a, ref to 25 c 92 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = 60 v t j = 25 c 1.0 a t j = 125 c 500 gate?to?source leakage current i gss v ds = 0 v, v gs = 20 v 10 a on characteristics (note 2) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 1.0 1.7 2.5 v negative threshold temperature coefficient v gs(th) /t j 4.0 mv/ c drain?to?source on resistance r ds(on) v gs = 10 v, i d = 500 ma 1.0 1.6 v gs = 4.5 v, i d = 200 ma 1.2 2.5 forward transconductance g fs v ds = 5 v, i d = 200 ma 80 s gate resistance r g 536 charges and capacitances input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = 20 v 26 pf output capacitance c oss 4.4 reverse transfer capacitance c rss 2.5 total gate charge q g(tot) v gs = 4.5 v, v ds = 25 v, i d = 200 ma 0.9 nc threshold gate charge q g(th) 0.2 gate?to?source charge q gs 0.3 gate?to?drain charge q gd 0.28 switching characteristics (note 3) turn?on delay time t d(on) v gs = 4.5 v, v dd = 25 v, i d = 200 ma, r g = 25 22 ns rise time t r 34 turn?off delay time t d(off) 34 fall time t f 32 drain?source diode characteristics forward diode voltage v sd v gs = 0 v, i s = 200 ma t j = 25 c 0.8 1.2 v t j = 85 c 0.7 product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 2. pulse test: pulse width 300 s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperatures.
NVJD5121N http://onsemi.com 3 typical performance curves (t j = 25 c unless otherwise noted) 0 0.4 0.8 1.2 1.6 012345 v ds , drain?to?source voltage (v) i d, drain current (a) figure 1. on?region characteristics t j = 25 c 5 v v gs = 10 4.5 v 4.2 v 4 v 3.8 v 3.6 v 3.4 v 3.2 v 3 v 2.4 v 2.8 v 2.6 v 2.2 v 0 0.2 0.4 0.6 0.8 1 1.2 012345 figure 2. transfer characteristics v gs , gate?t o?source voltage (v) i d, drain current (a) ?55 c 25 c v ds 10 v t j = 125 c 0 0.4 0.8 1.2 1.6 2 2.4 0 0.2 0.4 0.6 0.8 1 figure 3. on?resistance vs. drain current and temperature i d, drain current (a) r ds(on), drain?to?source resistance ( ) t j = 125 c v gs = 4.5 v t j = 85 c t j = 25 c t j = ?55 c 0 0.4 0.8 1.2 1.6 2 2.4 0 0.2 0.4 0.6 0.8 1 figure 4. on?resistance vs. drain current and temperature i d, drain current (a) r ds(on), drain?to?source resistance ( ) t j = 125 c v gs = 10 v t j = ?55 c t j = 25 c t j = 85 c 0.8 1.2 1.6 2 2.4 246810 figure 5. on?resistance versus gate?to?source voltage v gs , gate?t o?source voltage (v) r ds(on), drain?to?source resistance ( ) i d = 500 ma i d = 200 ma 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ?50 ?25 0 25 50 75 100 125 150 figure 6. on?resistance variation with temperature t j , junction temperature ( c) v gs = 10 v i d = 0.5 a r ds(on), drain?to?source resistance (normalized) 4.5 v 10 v 2.0 2.2 175
NVJD5121N http://onsemi.com 4 typical performance curves (t j = 25 c unless otherwise noted) 0 10 20 30 40 0 4 8 12 16 20 figure 7. capacitance variation drain?to?source voltage (v) c, capacitance (pf) t j = 25 c v gs = 0 v c oss c iss c rss 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1 figure 8. gate?to?source and drain?to?source voltage vs. total charge q g , total gate charge (nc) v gs, gate?to?source vo ltage (v) i d = 0.2 a t j = 25 c v dd = 25 v 0.01 0.1 1 0.4 0.6 0.8 1 1.2 figure 9. diode forward voltage vs. current v sd , source?to?drain voltage (v) i s , source current (a) v gs = 0 v t j = 25 c t j = 85 c
NVJD5121N http://onsemi.com 5 package dimensions sc?88/sc70?6/sot?363 case 419b?02 issue y notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimensions d and e1 do not include mold flash, protrusions, or gate burrs. mold flash, protru- sions, or gate burrs shall not exceed 0.20 per end. 4. dimensions d and e1 at the outermost extremes of the plastic body and datum h. 5. datums a and b are determined at datum h. 6. dimensions b and c apply to the flat section of the lead between 0.08 and 0.15 from the tip. 7. dimension b does not include dambar protrusion. allowable dambar protrusion shall be 0.08 total in excess of dimension b at maximum material condi- tion. the dambar cannot be located on the lower radius of the foot. c ddd m 123 a1 a c 654 e b 6x dim min nom max millimeters a ??? ??? 1.10 a1 0.00 ??? 0.10 ddd b 0.15 0.20 0.25 c 0.08 0.15 0.22 d 1.80 2.00 2.20 ??? ??? 0.043 0.000 ??? 0.004 0.006 0.008 0.010 0.003 0.006 0.009 0.070 0.078 0.086 min nom max inches 0.10 0.004 e1 1.15 1.25 1.35 e 0.65 bsc l 0.26 0.36 0.46 2.00 2.10 2.20 0.045 0.049 0.053 0.026 bsc 0.010 0.014 0.018 0.078 0.082 0.086 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 0.65 0.66 6x dimensions: millimeters 0.30 pitch 2.50 6x recommended top view side view end view bbb h b seating plane detail a e a2 0.70 0.90 1.00 0.027 0.035 0.039 l2 0.15 bsc 0.006 bsc aaa 0.15 0.006 bbb 0.30 0.012 ccc 0.10 0.004 a-b d aaa c 2x 3 tips d e1 d e a 2x aaa h d 2x d l plane detail a h gage l2 c ccc c a2 6x style 26: pin 1. source 1 2. gate 1 3. drain 2 4. source 2 5. gate 2 6. drain 1 on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other inte llectual property. a listing of scillc?s pr oduct/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 NVJD5121N/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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